PART |
Description |
Maker |
KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
N80 K4S511633CNBSP K4S511633C-YL_N80 K4S511633C K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 32Mx16 Mobile SDRAM 54CSP 1/CS 32Mx16移动SDRAM 54CSP 1/CS
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E |
512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
|
Elpida Memory, Inc. DRAM
|
IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2,银行注册内存模块(32M × 72配置2组寄存同步动态内存模块)
|
International Business Machines, Corp.
|
K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54 128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15 |
64M X 4 DDR DRAM, 1.5 ns, PBGA78 32M X 8 DDR DRAM, 1.87 ns, PBGA78 32M X 8 DDR DRAM, 1.5 ns, PBGA78
|
|
W332M72V-133SBI W332M72V-XBX |
32Mx72 Synchronous DRAM 32M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA208
|
White Electronic Design... WHITE ELECTRONIC DESIGNS CORP
|
E5116ABSE-4C-E |
32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
ELPIDA MEMORY INC
|